 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 0.23 500 V 24 A 500 V 22 A trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 20 30 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q 24 22 104 96 26 24 30 1.5 5 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM E153432 G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab 300 2500 5 Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 4.5 100 TJ = 25C TJ = 125C 26N50Q 24N50Q 25 1 0.20 0.23 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250uA VDS = VGS, ID = 4mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2 (c) 2001 IXYS All rights reserved 98664A (5/01) IXFR 24N50Q IXFR 26N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 14 24 3900 VGS = 0 V, VDS = 25 V, f = 1 MHz 500 130 28 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External), 30 55 16 95 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 27 40 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS 247 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26 104 1.3 TJ = 25C TJ = 25C TJ = 25C 250 1.5 A A V ns C A Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = Is, -di/dt = 100 A/s, VR = 100 V 0.85 8 Note: 1. Pulse test, t 300 s, duty cycle d 2 % IXFR26N50Q IT = 13A 2. IT test current: IXFR24N50Q IT = 12A 3. See IXFH26N50Q data sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
Price & Availability of IXFRB24N50Q
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |